The IRF520 is a Power Mosfet with 9.2A collector current and 100V breakdown voltage. The mosfet has a low gate threshold voltage of 4V and hence commonly used with microcontrollers like Arduino for switching high current loads.
Catalog
5PCS MOSFET Button IRF520 Driver-Modules For Arduino ARM Raspberry Pi Practical. 32mm Hose for Vacuum Cleaner Philips Expression FC 8604, UK Aluminium Metal Chain Strip Link Curtain Door Fly Screen All Seasons 214x90CM, 750W Electric Driven Hydraulic Pump Single Acting Manual Valve Pedal Switch, CAP ALUM 47UF 20% 450V RADIAL. An IRF520 has a threshold voltage in the range of 2 to 4 volts, so it's entirely possible a 3.3 v Arduino gate drive will not do the trick. The IRLZ44, on the other hand, has a.
IRF520 Pin Configuration
Pin Name | Description |
Source | Current flows out through Source |
Gate | Controls the biasing of the MOSFET |
Drain | Current flows in through Drain |
IRF520 Specification
Attribute | Attribute Value |
Manufacturer: | Vishay / Siliconix |
Product Category: | Transistors - FETs, MOSFETs - Single |
Mounting-Style: | SMD/SMT |
Package-Case: | TO-252-3 |
Number-of-Channels: | 1 Channel |
Transistor-Polarity: | N-Channel |
Vds-Drain-Source-Breakdown-Voltage: | 100 V |
Id-Continuous-Drain-Current: | 9.2 A |
Rds-On-Drain-Source-Resistance: | 270 mOhms |
Vgs-Gate-Source-Voltage: | 20 V |
Maximum-Operating-Temperature: | + 175 C |
Technology: | Si |
Packaging: | Reel |
Channel-Mode: | Enhancement |
Configuration: | Single |
Fall-Time: | 20 ns |
Minimum-Operating-Temperature: | - 55 C |
Pd-Power-Dissipation: | 3.7 W |
Rise-Time: | 30 ns |
Transistor-Type: | 1 N-Channel |
Typical-Turn-Off-Delay-Time: | 19 ns |
Typical-Turn-On-Delay-Time: | 8.8 ns |
Unit-Weight: | 0.050717 oz |
IRF520 Features
Mosfet Irf520 Arduino Codes
Dynamic dV/dt Rating
Repetitive Avalanche Rated
175 °C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC
IRF520 Applications
DC to DC converters
Applications that requires fast switching
Uninterruptible power supplies
Battery chargers
Battery management systems
Solar Applications
Motor Driver Circuits
Computer & telecommunication applications
Irf520 Mosfet Projects
IRF520 Functional Equivalents
Part Number | Description | Manufacturer |
IRF520TRANSISTORS | 10A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics |
IRF520PBFTRANSISTORS | Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies |
SIHF520-E3TRANSISTORS | TRANSISTOR 9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power | Vishay Siliconix |
SIHF520TRANSISTORS | TRANSISTOR 9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN, FET General Purpose Power | Vishay Siliconix |
Where We Can Use it & How to Use
IRF520 can be used in wide variety of circuits such as motor controller circuits, low current UPS, power supplies other than that it can also be used to drive other high power components such as relays and transistors etc. Due to low gate power requirements it can easily be used at the output of arduino, raspberry pi and variety of ICs and microcontrollers to drive high current loads. Beside the above uses it can also be used in audio amplifier circuits.
IRF520 Test Circuits
- Switching Time Test Circuit
- Unclamped Inductive Test Circuit
- Gate Charge Test Circuit
- Peak Diode Recovery dV/dt Test Circuit
How to Safely Long Run IRF520 in a Circuit
To get long term performance use IRF520, at least 20% below from its max ratings. The Maximum drain current is 9.2A thus do not drive load of more than 7.36A. The max drain to source voltage is 100V thus the load voltage should be under 80V. Gate to source voltage should be under ±20V and always store and operate the transistor in temperature above -55 Celsius and below +175 Celsius.
Arduino Irf520 Mosfet Module Wiring
IRF520 Package
IRF520 Popularity by Region
IRF520 Manufacturer
Vishay Intertechnology was founded in 1962 by Dr. Felix Zandman. It began operations with one technology that had two product lines: foil resistors and foil resistance strain gages. In 1985, having grown from a start-up into the world’s leading manufacturer of these original products, the Company began an ongoing series of strategic acquisitions to become a broadline manufacturer of electronic components. Today, Vishay Intertechnology is one of the world’s largest manufacturers of discrete semiconductors and passive electronic components. These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets.
Component Datasheet
IRF520 Datasheet
FAQ
The IRF520 is a Power Mosfet with 9.2A collector current and 100V breakdown voltage. The mosfet has a low gate threshold voltage of 4V and hence commonly used with microcontrollers like Arduino for switching high current loads. |
Power MOSFETs are widely used in transportation technology, which include a wide range of vehicles. In the automotive industry, power MOSFETs are widely used in automotive electronics. Power MOSFETs (including DMOS, LDMOS and VMOS) are commonly used for a wide range of other applications. |
In general, the MOSFET works as a switch, the MOSFET controls the voltage and current flow between the source and drain. The working of the MOSFET depends on the MOS capacitor, which is the semiconductor surface below the oxide layers between the source and drain terminal. |
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An N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. ... A depletion-type MOSFET is normally on (maximum current flows from drain to source) when no difference in voltage exists betweeen the gate and source terminals. |
The BJT is a bipolar junction transistor whereas MOSFET is a metal oxide semiconductor field-effect transistor. ... BJT's are used for low current applications, whereas MOSFET is used for high power applications. Nowadays, in analog and digital circuits, MOSFETs are treated to be more commonly used than BJTS. |
In an N-channel MOSFET, the source is connected to ground, the drain to the load, and the FET will turn on when a positive voltage is applied to the gate. ... This means that if you want to use a P-channel mosfet to switch voltages higher than 5V, you'll need another transistor (of some sort) to turn it on and off. |
The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device which is widely used for switching and amplifying electronic signals in the electronic devices. The MOSFET is a three terminal device such as source, gate, and drain. |
First, let's place the N-channel MOSFET onto the breadboard – make sure that each lead has its own node. Tie the source pin to GND, the gate to Uno pin 2, and the drain to the black wire on the fan. The red wire of the fan gets connected to the positive rail on the breadboard. |
| Photo | Mfr. Part # | Company | Description | Package | Qty | Pricing (USD) | |
| IRF520N | Company:Infineon Technologies | Remark:N-Channel 100V 9.7A (Tc) 48W (Tc) Through Hole TO-220AB | Package:TO-220-3 | DataSheet | In Stock:On Order Inquiry | Price: | Inquiry |